The full range of products provided by GeoSat Microwave. Our team is constantly working on new products to add to our lineup.
• Min. 38dBm Output P1dB over Temp.• Light Weight & Small Size• Leak Protected and 100% Screened• RoHS Compliant• 3 Year GeoSat Product Warranty
• High Linearity / High Efficiency• Light Weight & Small Size• Low Power Consumption 64W Typ.• Int & Ext Reference Detection & Auto Selection• LED Status Intication• 3 Year GeoSat Product Warranty
• High Linearity / High Efficiency• Light Weight & Small Size• Low Power Consumption 64W Typ.• Int & Ext Reference Detection & Auto Selection• LED Status Intication• 3 Year GeoSat Product Warranty
• Min. 47dBm Output P1dB over Temp• Light Weight & Small Size• Advanced M&C Interface (RS232/485) • Field-Exchangeable IF Connector• 3 Year GeoSat Product Warranty
• Min. 48dBm Output P1dB over Temp• Light Weight & Small Size• Advanced M&C Interface (RS232/485) • Field-Exchangeable IF Connector• 3 Year GeoSat Product Warranty
• Extremely high power density - up to 200W Psat• Powered by GaN Technology• Phase noise 8-10dB better than IESS308/309• Spurious below -60dB• RF Overdrive Protection• Switchable LO option - Standard / Extended• Input and Output True RMS Power Detection• Redundant Ready - no external controller required• Antenna Mounting kit optional• 3 Year GeoSat...
• Extremely high power density - up to 200W Psat• Powered by GaN Technology• Phase noise 8-10dB better than IESS308/309• Spurious below -60dB• RF Overdrive Protection• Switchable LO option - Standard / Extended• Input and Output True RMS Power Detection• Redundant Ready - no external controller required• Antenna Mounting kit optional• 3 Year GeoSat...
• Compliment the Use of Flexible Waveguide• Finished with Corrosion Protection• Available for the EIA & IEC Standard Flanges
• Fast waveguide connection and easy installation • Connects waveguide by several turns of a threaded clamp • Excellent choice for mobile and transportable applications• Available for the EIA & IEC Standard Flanges
• Low power consumption • Higher reliability from integrated design principle • Performing well at wide temperature range • Compact size and light weight • Meet ETSI, FCC Standards Features• 3 Year GeoSat Product Warranty
• Low power consumption • Higher reliability from integrated design principle • Performing well at wide temperature range • Compact size and light weight • Meet ETSI, FCC Standards Features• 3 Year GeoSat Product Warranty
• Low power consumption • Higher reliability from integrated design principle • Performing well at wide temperature range • Compact size and light weight • Meet ETSI, FCC Standards Features• 3 Year GeoSat Product Warranty
• Low power consumption • Higher reliability from integrated design principle • Performing well at wide temperature range • Compact size and light weight • Meet ETSI, FCC Standards Features• 3 Year GeoSat Product Warranty
• Built-in redundant ability without an external controller • GaN HEMTs result in best-in-class MTBF • Low power consumption• Higher reliability from integrated design principle • Performing well at wide temperature range
• Built-in redundant ability without an external controller • GaN HEMTs result in best-in-class MTBF • Low power consumption• Higher reliability from integrated design principle • Performing well at wide temperature range
• Built-in redundant ability without an external controller • GaN HEMTs result in best-in-class MTBF • Low power consumption• Higher reliability from integrated design principle • Performing well at wide temperature range
• Built-in redundant ability without an external controller • GaN HEMTs result in best-in-class MTBF • Low power consumption• Higher reliability from integrated design principle • Performing well at wide temperature range
• Built-in redundant ability without an external controller • GaN HEMTs result in best-in-class MTBF • Low power consumption• Higher reliability from integrated design principle • Performing well at wide temperature range
• Built-in redundant ability without an external controller • GaN HEMTs result in best-in-class MTBF • Low power consumption• Higher reliability from integrated design principle • Performing well at wide temperature range