GeoSat 200W Ku-Band (14.0 ~ 14.5GHz) BUC Block Up-Converter F-Connector | Model: GBS200KUF3 View larger

GeoSat 200W Ku-Band (13.75-14.5 GHz) BUC Block Up-Converter F-Connector

GBS200KUF3

New

•  Built-in redundant ability without an external controller
•  GaN HEMTs result in best-in-class MTBF
•  Low power consumption
•  Higher reliability from integrated design principle
•  Performing well at wide temperature range

More details

Specifications:

Section

Item

Specification

 

Power Requirement

RF Frequency

13.75-14.5 GHz

IF Frequency

950-1700 MHz

 

Input Characteristics

External Reference

10 MHz, 0±5 dBm

Saturated Output Power

53 dBm

Rated Output Power

53 dBm

Linear Output Power

50 dBm

IMD3 @3dB back-off from Rated Output Power

-25 dBc (max)

 

Output Characteristics

Small Signal Gain

70 dB

Gain Variation

1 dB p-p/ 36 MHz
3 dB p-p/ 500 MHz
4 dB p-p/ 750 MHz

Gain Stability

±1.5 dB

Gain Adjustment Range

20 dB (Step: 0.1 dB)

 

Transfer Characteristics

Phase Noise (IES-308/309)

-63 dBc/Hz @100 Hz
-73 dBc/Hz @1 KHz
-83 dBc/Hz @10 KHz
-93 dBc/Hz @100 KHz

Output Spurious

-55 dBc (max)

Power Supply

85 to 265 VAC

Power Supply Draw @Rated Output Power

1500 W

RF Output Connector

WR75 (Grooved)

RF Output VSWR

1.25:1

RF Sampling Connector

F-Type Female

IF Input Connector

F-Type Female

IF Input VSWR

1.5:1

Power Supply Connector

ACS02E-14S-7P

M & C Connector

PT02E-12-14P, RS-485, RS-232 & Ethernet

Redundancy Connector

PT02E-14-19P

LED Indicators

1 Green & 1 Red

Size

300*220*200 mm

Weight

10 Kg

 

Operating Temperature

-40 to +65 ℃

Humidity

0-100% (Condensing)

Altitude

0-10000 F ASL

 

Download the Specification in PDF Format

GeoSat 200W Ku-Band BUC Block Up-Converter F-Connector

 

 

 

 

Reviews

No customer comments for the moment.

Write a review

GeoSat 200W Ku-Band (13.75-14.5 GHz) BUC Block Up-Converter F-Connector

GeoSat 200W Ku-Band (13.75-14.5 GHz) BUC Block Up-Converter F-Connector

•  Built-in redundant ability without an external controller
•  GaN HEMTs result in best-in-class MTBF
•  Low power consumption
•  Higher reliability from integrated design principle
•  Performing well at wide temperature range

Write a review

Download